A LAYER GROWTH MECHANISMS FOR NON-STOICHIOMETRIC SILICON OXIDE WITH NANOCRYSTALS, PRODUCED BY PECVD
The paper describes the growth ofnon-stoichiometric silicon oxide containing nanocrystals (nc-SiOx : H) produced by PECVD compared to the growth mechanisms of amorphous silicon containing nanocrystals (nc-Si : H) The influence of process chamber pressure and of plasma's discharge power on the properties of the resulting nc-SiOx : H filmshas been demonstrated. The main peculiarity of layer formation's mechanism is t etching of silicon nanocrystals by hydrogen's plasma in the process layer deposition.
Authors: A. V. Kukin, E. E. Terukova, A. B. Semenov, D. A. Andronikov
Direction: Physical Electronics and Technologies of Micro- and Nanostructures
Keywords: Silicon Nanocrystals, solar energy, thin film, PECVD
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