NUMERICAL CALCULATION OF TRANSPARENCY COEFFICIENT FOR A DOPED HETEROSTRUCTURE WITH QUANTUM WELL BY METHOD OF INTERNAL PROBLEM

The numerical method of determining the transparency coefficient for a heterostructure with a single quantum well, based on solving the problem for the quantum box inner region, is developed. The analysis of calculations has allowed interpreting the data of temperature admittance spectra for samples with quantum well In0.29Ga0.71As/GaAs. The effect of resonant tunneling has been revealed, arising in the upper region of the quantum well, which presents a two-barrier structure due to identical doping of quantum well cladding layers. The calculations correlate well with the experimental data. At the increase of applied reverse bias the probability of carriers resonant tunneling from the quantum well drops sharply because of the symmetry violation of potential barriers and the corresponding drop in their transparency coefficient.

Authors: Yа. V. Ivanova, V. I. Zubkov

Direction: Physical Phenomena in a Solid Body, Liquids and Gases

Keywords: Quantum well, potential barriers, transparency coefficient, resonant tunneling, admittance spectroscopy, charge carrier emission

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