PARAMETRIC INVESTIGATION OF SCHOTTKY BARRIER GATE FIELD EFFECT TRANSISTOR WITH HETEROSTRUCTURE ALAS/GAAS IN SYNOPSYS SENTAURUS TCAD
Given the research parameters of the field-effect transistor with Schottky and heterostructure AlAs/GaAs in the environment Synopsys Sentaurus TCAD. The simulation of the effects associated with static scatter parameters of the transistor. In the simulation calculation of semiconductor structures is reduced to the solution of the finite el-ements of the known fundamental equations. The calculation was carried out taking into account the hydrodynam-ic model. The study took into account the following parameters of the model: the influence of surface charges, the radiative re-combination recombination Shockley-reed-Hall and several others. The result of the research found a number of parameters that have the greatest influence on the characteristics of the transistor.
Authors: D. V. Chshukin, N. I. Mikhailov, V. V. Perepelovskiy, Ya. N. Panichev, V. V. Marochkin, I. S. Pushnitsa, O. R. Fazylkhanov
Direction: Physical Electronics and Technologies of Micro- and Nanostructures
Keywords: Field-effect transistor, heterostructure, hydrodynamic model, Schottky barrier gate, AlAs/GaAs, Synopsys TCAD
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