SUPPRESSION OF INTERFERENCE IN THE STRUCTURE OF PHOTOSENSITIVE DEVICES WITH CHARGE TRANSFER USING A PHOSPHOR LAYER
The paper discusses features of the structure of photosensitive devices with charge transfer, resulting in occurrence of interference and, as a con-sequence, to the degradation of the metrological characteristics of spectrometric equipment based on these photodetectors. Location of the ex-trema of the signal oscillation caused by interference is determined by thickness and refractive index of the oxide film on the photodetector sur-face, and also by the detected spectral range. In order to get rid of the wavy signal modulation correction of the spectral sensitivity is required, in this paper is analyzed the possibility of inter-ference suppression by applying the surface layer of material with strong light scattering. As this mate-rial was chosen phos-phor K-77 deposited on the surface of the accumulation section of the photodetector. Experimentally confirmed is that the proposed method allows not only to achieve almost complete suppression of interference, but also to increase the sensitivity of the detector to ra-diation in the ultraviolet range.
Authors: A. A. Uhov, D. K. Kostrin, V. A. Gerasimov, L. M. Selivanov, V. A. Simon
Direction: Physical Electronics and Technologies of Micro- and Nanostructures
Keywords: Photosensitive device with charge transfer, optical spectrometer, interference, phosphor, media boundary, transmittance, emission spectrum
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