DIAGNOSTIC OF MORPHOLOGY AND ELECTRONIC SPECTRUM OF PHEMT HETEROSTRUCTURES
By means of electrochemical capacitance-voltage profiling and atomic force microscopy pHEMT heterostructures on base of InGaAs/GaAs/AlGaAs were investigated. Concentration profiles over the depth of the structure were obtained as well as 2DEG density in quantum well and surface quality of the grown epitaxial layers.
Authors: D. S. Frolov, G. E. Yakovlev, V. I. Zubkov, A. L. Dudin, A. V. Solomnikova, E. S. Kunashik
Direction: Physical Phenomena in a Solid Body, Liquids and Gases
Keywords: Electrochemical capacitance-voltage profiling, ECV, atomic-force microscopy, pHEMT, GaAs, InGaAs/GaAs/AlGaAs
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